TSMC's 3nm Node Targets Nvidia's Next-Gen NVHBM Chips via Samsung
As seen on the 24/7 Wall St. homepage on October 24, 2026.
Custom HBM base dies moving to a 3nm logic node means TSMC captures content inside every memory stack Nvidia buys, and Samsung's internal foundry review is the swing factor for who makes it.
Samsung will reportedly use TSMC’s $TSM 3nm node for base dies for Nvidia’s $NVDA next-gen custom NVHBM chips, though Samsung is also said to be evaluating if its internal foundry could handle manufacturing. $MU
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Samsung is reportedly set to use TSMC's 3nm process node to manufacture base dies for Nvidia's next-generation custom NVHBM chips. The base die is the logic foundation of a high-bandwidth memory stack, and moving it to a leading-edge 3nm node is a meaningful escalation in the sophistication of memory architecture Nvidia is pursuing.
If Samsung sources those base dies from TSMC rather than its own foundry, TSMC earns revenue inside every NVHBM memory stack Nvidia buys, a position that compounds as Nvidia's AI accelerator volumes grow.
The swing factor, as Beth Kindig flagged, is Samsung's internal foundry review of whether its own manufacturing operations can handle the work, which means the TSMC arrangement is not yet locked in. Investors in all three named companies should follow that deliberation closely.
Micron is tagged in the original post without elaboration, but its presence signals the broader competitive read-across to the HBM market. Any shift in who supplies base dies and on what process node reshapes the cost and yield dynamics for every player competing for Nvidia's memory business.